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Author
Steven P. DenBaars
also known as DenBaars, DenBaars, Steven, DenBaars, Steven P.
Linköping University · University of Pisa · Oklahoma State University · University of Southern California
About this author
Works
1,514
Cited by
67,566
h-index
126
i10
854
ORCID ↗
Top papers
Prospects for LED lighting
Siddha Pimputkar, James S. Speck, Steven P. DenBaars, et al.
·
2009
·
Nature Photonics
↗ 2,145
Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces
D. Leonard, Mohan Krishnamurthy, C.M. Reaves, et al.
·
1993
·
Applied Physics Letters
↗ 1,731
Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
Tetsuo Fujii, Yan Gao, Rajat Sharma, et al.
·
2004
·
Applied Physics Letters
↗ 1,301
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
J. P. Ibbetson, P. Fini, K. D. Ness, et al.
·
2000
·
Applied Physics Letters
↗ 1,089
Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films
B. Heying, Xuemei Wu, S. Keller, et al.
·
1996
·
Applied Physics Letters
↗ 826
Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
John F. Muth, J. H. Lee, I. K. Shmagin, et al.
·
1997
·
Applied Physics Letters
↗ 751
“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells
Yong‐Hoon Cho, G. H. Gainer, A. J. Fischer, et al.
·
1998
·
Applied Physics Letters
↗ 708
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
Shigefusa F. Chichibu, Akira Uedono, Takeyoshi Onuma, et al.
·
2006
·
Nature Materials
↗ 684
High-power AlGaN/GaN HEMTs for Ka-band applications
Tomás Palacios, A. Chakraborty, Siddharth Rajan, et al.
·
2005
·
IEEE Electron Device Letters
↗ 490
OA
AlGaN/AlN/GaN high-power microwave HEMT
L. Shen, S. Heikman, Brendan Moran, et al.
·
2001
·
IEEE Electron Device Letters
↗ 489
Structural characterization of nonpolar (1120) <i>a</i>-plane GaN thin films grown on (1102) <i>r</i>-plane sapphire
Michael D. Craven, Sung‐Hwan Lim, Feng Wu, et al.
·
2002
·
Applied Physics Letters
↗ 486
Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells
Xuehua Wu, C. R. Elsass, A. Abare, et al.
·
1998
·
Applied Physics Letters
↗ 458