Ronald D. Schrimpf

Top papers

• Charge Collection and Charge Sharing in a 130 nm CMOS Technology

  Oluwole A. Amusan, Arthur F. Witulski, L. W. Massengill, et al.·2006·IEEE Transactions on Nuclear Science
  ↗ 396
• Response of advanced bipolar processes to ionizing radiation

  E.W. Enlow, R.L. Pease, W.E. Combs, et al.·1991·IEEE Transactions on Nuclear Science
  ↗ 319
• Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates

  Daniel M. Fleetwood, S.L. Kosier, R.N. Nowlin, et al.·1994·IEEE Transactions on Nuclear Science
  ↗ 282
• Monte Carlo Simulation of Single Event Effects

  Robert A. Weller, Marcus H. Mendenhall, Robert A. Reed, et al.·2010·IEEE Transactions on Nuclear Science
  ↗ 221
• Structure, Properties, and Dynamics of Oxygen Vacancies in Amorphous<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow><mml:mi mathvariant="normal">S</mml:mi><mml:mi mathvariant="normal">i</mml:mi><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:math>

  Zhong-Yi Lu, Christopher Nicklaw, Daniel M. Fleetwood, et al.·2002·Physical Review Letters
  ↗ 201
• Charge separation for bipolar transistors

  S.L. Kosier, Ronald D. Schrimpf, R.N. Nowlin, et al.·1993·IEEE Transactions on Nuclear Science
  ↗ 199
• Physical model for enhanced interface-trap formation at low dose rates

  Sergey N. Rashkeev, C.R. Cirba, Daniel M. Fleetwood, et al.·2002·IEEE Transactions on Nuclear Science
  ↗ 194
• Trends in the total-dose response of modern bipolar transistors

  R.N. Nowlin, E.W. Enlow, Ronald D. Schrimpf, et al.·1992·IEEE Transactions on Nuclear Science
  ↗ 193
• Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions

  Brian D. Sierawski, Jonathan A. Pellish, Robert A. Reed, et al.·2009·IEEE Transactions on Nuclear Science
  ↗ 193
• Defect Generation by Hydrogen at the Si-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>SiO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Interface

  Sergey N. Rashkeev, Daniel M. Fleetwood, Ronald D. Schrimpf, et al.·2001·Physical Review Letters
  ↗ 192
• Defects in Microelectronic Materials and Devices

  Daniel M. Fleetwood, Sokrates T. Pantelides, Ronald D. Schrimpf·2008
  ↗ 180
• Single-Event Burnout Mechanisms in SiC Power MOSFETs

  Arthur F. Witulski, Dennis R. Ball, K.F. Galloway, et al.·2018·IEEE Transactions on Nuclear Science
  ↗ 178OA