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Author
M. C. M. van de Sanden
also known as M C M Van de Sanden, M C M van de Sanden, M Graswinckel
Renewable Energy Systems (United States) · Dutch Institute for Fundamental Energy Research · Eindhoven University of Technology · University of Notre Dame
About this author
Works
983
Cited by
25,524
h-index
78
i10
400
ORCID ↗
Top papers
The 2017 Plasma Roadmap: Low temperature plasma science and technology
Igor Adamovich, Scott Baalrud, Annemie Bogaerts, et al.
·
2017
·
Journal of Physics D Applied Physics
↗ 935
OA
Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges
Harald B. Profijt, Stephen E. Potts, M. C. M. van de Sanden, et al.
·
2011
·
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
↗ 872
OA
Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
Bram Hoex, S. B. S. Heil, E. Langereis, et al.
·
2006
·
Applied Physics Letters
↗ 718
OA
X-Ray photoelectron spectroscopy reference data for identification of the C3N4 phase in carbon–nitrogen films
A.P. Dementjev, Anneke de Graaf, M. C. M. van de Sanden, et al.
·
2000
·
Diamond and Related Materials
↗ 550
On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3
Bram Hoex, J. J. H. Gielis, M. C. M. van de Sanden, et al.
·
2008
·
Journal of Applied Physics
↗ 534
OA
The 2022 Plasma Roadmap: low temperature plasma science and technology
Igor Adamovich, Sumit Agarwal, Eduardo Ahedo, et al.
·
2022
·
Journal of Physics D Applied Physics
↗ 497
OA
Silicon surface passivation by atomic layer deposited Al2O3
Bram Hoex, Jan Schmidt, Peter Pohl, et al.
·
2008
·
Journal of Applied Physics
↗ 469
OA
Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al<sub>2</sub>O<sub>3</sub>
Jan Schmidt, Agnes Merkle, Rolf Brendel, et al.
·
2008
·
Progress in Photovoltaics Research and Applications
↗ 450
Optical constants of graphene measured by spectroscopic ellipsometry
J. W. Weber, V. E. Calado, M. C. M. van de Sanden
·
2010
·
Applied Physics Letters
↗ 416
OA
Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3
Bram Hoex, Jan Schmidt, Robert Bock, et al.
·
2007
·
Applied Physics Letters
↗ 401
OA
Determining the material structure of microcrystalline silicon from Raman spectra
C. Smit, R.A.C.M.M. van Swaaij, H. Donker, et al.
·
2003
·
Journal of Applied Physics
↗ 383
OA
High efficiency n-type Si solar cells on Al2O3-passivated boron emitters
Jan Benick, Bram Hoex, M. C. M. van de Sanden, et al.
·
2008
·
Applied Physics Letters
↗ 346
OA