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Author
M. Asif Khan
also known as M Asif Khan, M. A Khan, M. A. Khan
University of South Carolina · United States Naval Research Laboratory · University of Illinois Urbana-Champaign · National Institute of Technology Rourkela
About this author
Works
135
Cited by
11,063
h-index
53
i10
91
Top papers
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
J. Y. Tsao, Srabanti Chowdhury, M.A. Hollis, et al.
·
2017
·
Advanced Electronic Materials
↗ 1,485
OA
High electron mobility transistor based on a GaN-Al<i>x</i>Ga1−<i>x</i>N heterojunction
M. Asif Khan, Amal R. Bhattarai, J. N. Kuznia, et al.
·
1993
·
Applied Physics Letters
↗ 869
High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers
M. Asif Khan, J. N. Kuznia, D. T. Olson, et al.
·
1992
·
Applied Physics Letters
↗ 385
Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
M. Asif Khan, J. N. Kuznia, D. T. Olson, et al.
·
1994
·
Applied Physics Letters
↗ 353
Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition
E. R. Glaser, T. A. Kennedy, K. Doverspike, et al.
·
1995
·
Physical review. B, Condensed matter
↗ 327
Growth defects in GaN films on sapphire: The probable origin of threading dislocations
X. J. Ning, F. R. Chien, P. Pirouz, et al.
·
1996
·
Journal of materials research/Pratt's guide to venture capital sources
↗ 326
Schottky barrier detectors on GaN for visible–blind ultraviolet detection
Q. Chen, Jinhong Yang, A. Osinsky, et al.
·
1997
·
Applied Physics Letters
↗ 295
Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C
M. Asif Khan, M. S. Shur, John N. Kuznia, et al.
·
1995
·
Applied Physics Letters
↗ 273
Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to <b> <i>n</i> </b>-type GaN
B. P. Luther, Suzanne E. Mohney, Thomas N. Jackson, et al.
·
1997
·
Applied Physics Letters
↗ 260
Observation of a two-dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN-Al<i>x</i>Ga1−<i>x</i>N heterojunctions
M. Asif Khan, J. N. Kuznia, J. M. Van Hove, et al.
·
1992
·
Applied Physics Letters
↗ 233
Low noise <i>p-</i>π<i>-n</i> GaN ultraviolet photodetectors
A. Osinsky, S. Gangopadhyay, R. Gaška, et al.
·
1997
·
Applied Physics Letters
↗ 230
Electron mobility in two-dimensional electron gas in AIGaN/GaN heterostructures and in bulk GaN
M. S. Shur, Boris Gelmont, M. Asif Khan
·
1996
·
Journal of Electronic Materials
↗ 221
Books
Tectonics of the Nanga Purbat Syntaxis and the Western Himalaya
2000
·
Geological Society of London
Disaster preparedness for natural hazards
2007
·
International Centre for Integrated Mountain Development
Tectonics of the Nanga Parbat syntaxis and the Western Himalaya
2000
·
Geological Society