Hideo Hosono

Iron-Based Layered Superconductor La[O_1-<i>_x</i>F<i>_x</i>]FeAs (<i>x</i> = 0.05−0.12) with <i>T</i>_c = 26 K

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

P-type electrical conduction in transparent thin films of CuAlO2

Present status of amorphous In–Ga–Zn–O thin-film transistors

Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

Iron-Based Layered Superconductor:  LaOFeP

Ammonia synthesis using a stable electride as an electron donor and reversible hydrogen store

Superconductivity at 43 K in an iron-based layered compound LaO1-xFxFeAs

High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

Material characteristics and applications of transparent amorphous oxide semiconductors

Giant thermoelectric Seebeck coefficient of a two-dimensional electron gas in SrTiO3

Deep-ultraviolet transparent conductive β-Ga2O3 thin films